For years the arrow of memory technology pointed one way – from Korea and the U.S. into China. A deal disclosed this week points the other direction.
Chinese IP vendor Innosilicon confirmed at a Shanghai launch event that its self-developed LPDDR6/5X Combo memory-interface IP has been adopted by a major Korean DRAM manufacturer. The customer was not named, but industry watchers point squarely at Samsung or SK Hynix.
The IP moves data at 14.4 Gbps per channel – about 50% faster than the prior LPDDR5X generation – thanks to LPDDR6’s wider 24-bit channel, giving a single chip peak bandwidth of 38.4 GB/s. It also packs ECS auto/manual calibration, Link ECC error correction, DVFSL dynamic voltage scaling and x24/x48 burst modes.
For AI workloads, Innosilicon tuned the IP end-to-end for the high-frequency KV-cache reads and writes of long-context large models, cutting transmission jitter and signal loss. Notably, the IP was designed entirely with domestic EDA tooling, spanning 28 nm down to 3 nm process nodes.
Innosilicon says its IP has already supported the mass production of more than 10 billion SoCs. Landing a Korean giant’s order means Chinese IP has achieved a genuine reverse export in high-end memory interfaces – a small but symbolic crack in a market long dominated by foreign suppliers. The event drew more than 30 top supply-chain names, including Samsung, TSMC and SMIC.
Source (Chinese original): Sohu IT
Translated and adapted from Sohu IT (it.sohu.com).